parametry procesu nMOS

SkrótPełna nazwa
Buffer oxidation
BUFOXTIMEBuffer oxidation time
BUFOXTEMPBuffer oxidation temperature
BUFOXP02Buffer oxidation oxygen partial pressure
BUFOXPHCLBuffer oxidation HCl partial pressure
Field implantation
FIMPENERGField implant energy
FIMPDOSEField implant dose
Field oxidation
FOXTIMEField oxidation time
FOXTEMPField oxidation temperature
FOXPO2Field oxidation oxygen partial pressure
First gate oxidation
GOX1TIMEFirst gate oxidation time
GOX1TEMPFirst gate oxidation temperature
GOX1PO2First gate oxid. oxygen partial pressure
GOX1PHCLFirst gate oxid. HCl partial pressure
Second gate oxidation
GOX2TIMESecond gate oxidation time
GOX2TEMPSecond gate oxidation temperature
GOX2PO2Second gate oxidation oxygen partial pressure
GOX2PHCLSecond gate oxidation HCl partial pressure
Enhancement channel implantation
ENHIMPDOSEEnhancement channel implant dose
ENHIMPENEREnhancement channel implant energy
Depletion channel implantation
DEPIMPDOSEDepletion channel implant dose
DEPIMPENERDepletion channel implant energy
Deposition of polysilicon
POLYTIMEPolySi deposition time
POLYTEMPPolySi deposition temperature
Doping of polysilicon
POLYDOPTIMPolySi doping time
POLYDOPTMPPolySi doping temperature
Oxidation of polysilicon
POXTIMEPolySi oxidation time
POXTEMPPolySi oxidation temperature
Source/drain predeposition
SDPREDTIMESource/drain predeposition time
SDPREDTEMPSource/drain predeposition temperature
SDPREDNSSource/drain surface doping concentration
Source/drain first oxidation
SDOX1TIMES/D first oxidation time
SDOX1TEMPS/D first oxidation temperature
SDOX1PO2S/D first oxidation oxygen partial press.
Source/drain second oxidation
SDOX2TIMES/D second oxidation time
SDOX2TEMPS/D second oxidation temperature
SDOX2PO2S/D second oxidation oxygen partial pressure
Source/drain drive-in
SDDITIMESource/drain drive-in time
SDDITEMPSource/drain drive-in temperature
Densification
DENSTIMEDensification time
DENSTEMPDensification temperature
Contact predeposition
CTPRETIMEContact predeposition time
CTPRETEMPContact predeposition temperature
CTPRENSContact predeposition surface concentration
Contact drive-in
CTDITIMEContact drive-in time
CTDITEMPContact drive-in temperature