| Skrót | Pełna nazwa
|
| First oxidation
|
| FSTOXTIME | First oxidation time
|
| FSTOXTEMP | First oxidation temperature
|
| FSTOXP02 | First oxidation oxygen partial pressure
|
| Well implantation
|
| WELLIMPENER | Well implant energy
|
| WELLIMPDOSE | Well implant dose
|
| Well oxidation
|
| WELLOXTIME | Well oxidation time
|
| WELLOXTEMP | Well oxidation temperature
|
| WELLOXPO2 | Well oxidation oxygen partial pressure
|
| WELLOXPHCL | Well oxidation HCl partial pressure
|
| Well drive-in
|
| WELLDITIME | Well drive-in time
|
| WELLDITEMP | Well drive-in temperature
|
| Buffer oxidation
|
| BUFOXTIME | Buffer oxidation time
|
| BUFOXTEMP | Buffer oxidation temperature
|
| BUFOXPO2 | Buffer oxidation oxygen partial pressure
|
| BUFOXPHCL | Buffer oxidation HCl partial pressure
|
| First densification
|
| DENS1TIME | First densification time
|
| DENS1TEMP | First densification temperature
|
| N field implantation
|
| NFIMPENER | N field implant energy
|
| NFIMPDOSE | N field implant dose
|
| P field implantation
|
| PFIMPENER | P field implant energy
|
| PFIMPDOSE | P field implant dose
|
| Field oxidation
|
| FOXTIME | Field oxidation time
|
| FOXTEMP | Field oxidation temperature
|
| FOXPO2 | Field oxid. oxygen partial pressure
|
| First gate oxidation
|
| GOX1TIME | First gate oxidation time
|
| GOX1TEMP | First gate oxidation temperature
|
| GOX1PO2 | First gate oxid. oxygen partial pressure
|
| GOX1PHCL | First gate oxid. HCl partial pressure
|
| Second gate oxidation
|
| GOX2TIME | Second gate oxidation time
|
| GOX2TEMP | Second gate oxidation temperature
|
| GOX2PO2 | Second gate oxidation oxygen partial pressure
|
| GOX2PHCL | Second gate oxidation HCl partial pressure
|
| Channel implantation
|
| CHIMPDOSE | Channel implant dose
|
| CHIMPENER | Channel implant energy
|
| Deposition of polysilicon
|
| POLYTIME | PolySi deposition time
|
| POLYTEMP | PolySi deposition temperature
|
| Doping of polysilicon
|
| POLYDOPTIM | PolySi doping time
|
| POLYDOPTMP | PolySi doping temperature
|
| Oxidation of polysilicon
|
| POXTIME | PolySi oxidation time
|
| POXTEMP | PolySi oxidation temperature
|
| P source/drain implantation
|
| PSDIMPENER | P-source/drain implant energy
|
| PSDIMPDOSE | P-source/drain implant dose
|
| N source/drain implantation
|
| NSDIMPENER | N-source/drain implant energy
|
| NSDIMPDOSE | N-source/drain implant dose
|
| Second densification
|
| DENS2TIME | Second densification time
|
| DENS2TEMP | Second densification temperature
|
| Contact predeposition
|
| CTPRETIME | Contact predeposition time
|
| CTPRETEMP | Contact predeposition temperature
|
| CTPRENS | Contact predeposition surface concentration
|
| Contact drive-in
|
| CTDITIME | Contact drive-in time
|
| CTDITEMP | Contact drive-in temperature
|